BARE DIE SILICON CARBIDE SCHOTTKY DIODES CAN BE FUN FOR ANYONE

seventy eight and 1.16 V. These values, derived from room temperature I–V measurements, are documented in Determine 12b. As you can see, the Schottky barrier height depends upon the amorphous layer thickness and thermal annealing duration. Precisely, when a slight influence of your amorphous layer thickness was noticed over the Schottky barrier v